Device using a piezoelectric film

ABSTRACT

An inkjet printing head  1  includes a pressure chamber  5 , a vibrating film formation layer  10  including a vibrating film  10 A defining the pressure chamber  5 , and a piezoelectric element  6  disposed on the vibrating film  10 A. The piezoelectric element  6  includes a lower electrode  7  formed on the vibrating film formation layer  10 , a piezoelectric film  8  formed on the lower electrode  7 , and an upper electrode  9  formed on the piezoelectric film  8 . The lower electrode  7  includes a crossover region  7 C crossing over a peripheral edge of the top surface portion of the pressure chamber  5  in a plan view. In the lower electrode  7 , a thickness of the crossover region  7 C and a portion, excluding the crossover region  7 C, of an inner electrode region, disposed at an inner side of peripheral edges of the top surface portion of the pressure chamber  5  in a plan view, is defined to be thinner than a thickness of other portions of the lower electrode  7.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a device using a piezoelectric film,such as an actuator or sensor, etc., that uses a piezoelectric film.

2. Description of the Related Art

An inkjet printing head is known as an actuator that uses apiezoelectric film. An example of such an inkjet printing head isdisclosed in Japanese Patent Application Publication No. 2013-215930.The inkjet printing head disclosed in Japanese Patent ApplicationPublication No. 2013-215930 includes a nozzle substrate, a pressurechamber substrate, a vibrating film, and a piezoelectric element bondedto the vibrating film. A pressure chamber, into which ink is introduced,is formed in the pressure chamber substrate and the vibrating film facesthe pressure chamber. The piezoelectric element is arranged bylaminating a lower electrode, a piezoelectric film, and an upperelectrode in that order from the vibrating film side.

Lead zirconate titanate (PZT: PbZr_(x)Ti_(1-x)O₃) is a perovskiteferroelectric substance, and sensors and actuators that make use of itsexcellent piezoelectric characteristics have been proposed. Apiezoelectric film that uses PZT is formed by a sputtering method or asol-gel method. The forming of a PZT film by a sol-gel method isdescribed, for example, in Japanese Patent Application Publication No.6-40727. The sol-gel method includes a coating process of coating on aprecursor solution, containing PZT, to form a coating film, a dryingprocess of drying the coating film, a prebaking process of heating thecoating film after the drying process to make the coating film undergogelling, and a main baking process of heat-treating and therebysintering the gelled coating film. Ordinarily, the PZT film is formed byperforming the main baking process after repeating a process,constituted of the coating process, the drying process and the prebakingprocess, a plurality of times. The piezoelectric film having a targetedfilm thickness is formed by such a series of processes being performedrepeatedly. The piezoelectric film thus includes a plurality oflaminated PZT layers.

SUMMARY OF THE INVENTION

The inventor of preferred embodiments of the present invention describedand claimed in the present application conducted an extensive study andresearch regarding a device using a piezoelectric film, such as the onedescribed above, and in doing so, discovered and first recognized newunique challenges and previously unrecognized possibilities forimprovements as described in greater detail below.

With the arrangement described in Japanese Patent ApplicationPublication No. 2013-215930, the lower electrode is formed to have auniform thickness. Although to make the displacement of the vibratingfilm large, it is preferable for the lower electrode to be thinner inthickness, if the lower electrode is made thin in thickness, the lowerelectrode increases in resistance value.

An object of the present invention is to provide a device using apiezoelectric film with which a lower electrode can be made low inresistance value and a vibrating film can be made large in displacement.

In order to overcome the previously unrecognized and unsolved challengesdescribed above, a device using a piezoelectric film according to thepresent invention includes a cavity, a vibrating film formation layerincluding a vibrating film disposed above the cavity and defining a topsurface portion of the cavity, and a piezoelectric element formed tocontact a surface of the vibrating film at an opposite side from thecavity and having a peripheral edge receded further toward an interiorof the cavity than the vibrating film in a plan view of viewing from adirection normal to a major surface of the vibrating film, thepiezoelectric element includes a lower electrode formed on a surface ofthe vibrating film formation layer at the opposite side from the cavity,an upper electrode disposed at an opposite side from the vibrating filmformation layer with respect to the lower electrode, and a piezoelectricfilm provided between the upper electrode and the lower electrode, thelower electrode includes a main electrode portion constituting thepiezoelectric element and an extension portion lead out from the mainelectrode portion in a direction along the surface of the vibrating filmformation layer to cross over a top surface portion peripheral edge ofthe cavity and extend outside the cavity in the plan view, and, in theplan view, the main electrode portion is included in an inner electroderegion of the lower electrode located further inward than the topsurface portion peripheral edge of the cavity, the extension portionincludes an outer electrode region of the lower electrode connected tothe inner electrode region and located further outward than the topsurface portion peripheral edge of the cavity, and the lower electrodehas a thin portion formed thinly to cross over a boundary line betweenthe inner electrode region and the outer electrode region.

A region of the vibrating film between a peripheral edge of thevibrating film and the peripheral edge of the piezoelectric element,that is, a peripheral edge portion of the vibrating film is a regionthat is not constrained by the piezoelectric element or a peripheralwall of the cavity and is a region in which a large deformation occurs.Therefore, when the piezoelectric element is driven, the peripheral edgeportion of the vibrating film bends so that an inner peripheral edgeside of the peripheral edge portion of the vibrating film is displacedin a thickness direction of the cavity and an entirety of a centralportion surrounded by the peripheral edge portion of the vibrating filmis thereby displaced in the thickness direction of the cavity.

Of a region of the lower electrode crossing over the boundary line ofthe inner electrode region and the outer electrode region in a planview, a region located further inward than the top surface portionperipheral edge of the cavity is formed on the peripheral edge portionof the vibrating film. The region of the lower electrode crossing overthe boundary line of the inner electrode region and the outer electroderegion may thus obstruct the deformation of the vibrating film. In thepresent invention, the lower electrode has the thin portion that isformed thinly to cross over the boundary line between the innerelectrode region and the outer electrode region. The deformation of thevibrating film is thereby made less likely to be obstructed incomparison to a case where the entire lower electrode is thick inthickness.

Also with the present invention, the thickness of a region of the lowerelectrode besides the thin portion can be formed to be thicker than thethin portion and the lower electrode can thus be decreased in resistancevalue compared to a case where the entire lower electrode is thin inthickness. A device using a piezoelectric film, with which the lowerelectrode can be made low in resistance value and the vibrating film canbe made large in displacement, can thus be provided with the presentinvention.

In a preferred embodiment of the present invention, the thin portion isformed across an entirety of the boundary line between the innerelectrode region and the outer electrode region of the lower electrode.With this arrangement, the displacement of the vibrating film can beincreased in comparison to a case where the thin portion is formed onlyat a portion of the boundary line between the inner electrode region andthe outer electrode region of the lower electrode.

In the preferred embodiment of the present invention, the main electrodeportion is also formed at a thin portion of thin thickness. With thisarrangement, the displacement of the vibrating film can be increasedfurther.

In the preferred embodiment of the present invention, the thickness of aregion of the lower electrode including the main electrode portion isthicker than the thickness of the thin portion. With this arrangement,the lower electrode can be decreased further in resistance value.

In the preferred embodiment of the present invention, the thickness ofthe entirety of the main electrode portion is thicker than the thicknessof the thin portion and the thickness of a region of the inner electroderegion besides the main electrode portion is thin. With thisarrangement, the lower electrode can be decreased further in resistancevalue and the displacement of the vibrating film can be increasedfurther.

In the preferred embodiment of the present invention, the thin portionis formed at a portion of the boundary line between the inner electroderegion and the outer electrode region of the lower electrode. With thisarrangement, the lower electrode can be decreased in resistance value incomparison to a case where the thin portion is formed across theentirety of the boundary line between the inner electrode region and theouter electrode region of the lower electrode.

In the preferred embodiment of the present invention, the thin portionincludes a plurality of thin portions formed at intervals along theboundary line between the inner electrode region and the outer electroderegion of the lower electrode.

In the preferred embodiment of the present invention, the plurality ofthe thin portions have rectangular shapes that are long in a directionalong the boundary line between the inner electrode region and the outerelectrode region of the lower electrode.

In the preferred embodiment of the present invention, the thickness ofthe region of the lower electrode including the main electrode portionis thicker than the thickness of the thin portion. With thisarrangement, the lower electrode can be decreased further in resistancevalue.

In the preferred embodiment of the present invention, the thickness ofthe entirety of the main electrode portion is thicker than the thicknessof the thin portion and the thickness of the region of the innerelectrode region besides the main electrode portion is thin. With thisarrangement, the lower electrode can be decreased further in resistancevalue and the displacement of the vibrating film can be increasedfurther.

In the preferred embodiment of the present invention, in the plan view,the top surface portion of the cavity has a rectangular shape that islong in one direction, the main electrode portion has, in the plan view,a rectangular shape being long in the one direction and having a widthshorter than a width in a short direction of the top surface portion ofthe cavity and a length shorter than a length in a long direction of thetop surface portion of the cavity, with both end edges and both sideedges thereof receded further toward the interior of the cavity thanboth end edges and both side edges of the top surface portion of thecavity, the extension portion extends from respective side edges of themain electrode portions to the outside of corresponding side edges ofthe top surface portion of the cavity upon crossing over intermediateportions of the top surface portion side edges, and the boundary linebetween the inner electrode region and the outer electrode regionincludes two boundary lines corresponding to the intermediate portionsof the respective side edges of the top surface portion of the cavity.

In the preferred embodiment of the present invention, a plurality of thecavities are provided and the plurality of the cavities are disposed tobe aligned in the short direction of each cavity. With this arrangement,a device using a piezoelectric film, which is suited for an inkjetprinting head, can be provided.

In the preferred embodiment of the present invention, mutually facingside edges of two of the main electrode portions respectively disposedabove two of the cavities that are mutually adjacent are connected toeach other by the extension portion lead out therefrom and the thicknessof substantially the entirety of a region of the extension portionbetween the two mutually adjacent cavities is thicker than the thicknessof the thin portion. With this arrangement, a device using apiezoelectric film, which is suited for an inkjet printing head and withwhich the lower electrode is even lower in resistance value, can beprovided.

In the preferred embodiment of the present invention, the extensionportion lead out from a plurality of the main electrode portionsdisposed above a plurality of the cavities is, in the plan view,connected at a position further outside the respective cavities than oneend in the long direction of the respective cavities. With thisarrangement, the lower electrode can be connected to the exterior at theposition further outside the respective cavity than the one end in thelong direction of the respective cavities.

In the preferred embodiment of the present invention, a plurality ofcutout portions are formed in regions of the lower electrode, which, inthe plan view, respectively include end portions of the respectivecavities at the one end side in the long direction. With thisarrangement, the displacement of the piezoelectric film of eachpiezoelectric element can be increased further.

Other elements, features, steps, characteristics and advantages of thepresent invention will become more apparent from the following detaileddescription of the preferred embodiments with reference to the attacheddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic plan view of an inkjet printing head to which adevice using a piezoelectric film according to a preferred embodiment ofthe present invention is applied.

FIG. 2 is a schematic enlarged sectional view taken along line II-II inFIG. 1.

FIG. 3 is a schematic enlarged sectional view taken along line III-IIIin FIG. 1.

FIG. 4 is a schematic perspective view of the inkjet printing head.

FIG. 5 is a partially enlarged plan view of FIG. 1.

FIG. 6 is a process diagram of an example of a process for manufacturingthe inkjet printing head.

FIG. 7 is a plan view for describing the arrangement of an inkjetprinting head according to another preferred embodiment of the presentinvention.

FIG. 8 is a sectional view for describing the arrangement of the inkjetprinting head of FIG. 7.

FIG. 9 is a plan view for describing the arrangement of an inkjetprinting head according to yet another preferred embodiment of thepresent invention.

FIG. 10 is a schematic sectional view of a piezoelectric film.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 is a schematic plan view of an inkjet printing head to which adevice using a piezoelectric element according to a preferred embodimentof the present invention is applied. FIG. 2 is a schematic enlargedsectional view taken along line II-II in FIG. 1. FIG. 3 is a schematicenlarged sectional view taken along line III-III in FIG. 1. FIG. 4 is aschematic perspective view of the inkjet printing head. A hydrogenbarrier film indicated by the symbol 13 and an insulating film indicatedby the symbol 14 in FIG. 2 and FIG. 3 are omitted in FIG. 1 and FIG. 4.

Referring to FIG. 2, the inkjet printing head 1 includes a siliconsubstrate 2 and a nozzle substrate 3 having a discharge port 3 a thatdischarges ink. A vibrating film formation layer 10 is laminated on thesilicon substrate 2. In the laminate of the silicon substrate 2 and thevibrating film formation layer 10, a pressure chamber (cavity) 5 isformed as ink flow passages (ink reservoirs). The pressure chamber 5 isconstituted of a space portion 5A, formed in the silicon substrate 2 andpenetrating through the silicon substrate 2 in a thickness direction,and a recess 5B, formed in a rear surface (surface at the siliconsubstrate 2 side) of the vibrating film formation layer 10 andcontinuous to the space portion 5A.

The nozzle substrate 3 is constituted, for example, of a silicon plate,is adhered to a rear surface of the silicon substrate 2, and, togetherwith the silicon substrate 2 and the vibrating film formation layer 10,defines the pressure chamber 5. The nozzle substrate 3 has a recess 3 bfacing the pressure chamber 5 and an ink discharge passage 3 c is formedin a bottom surface of the recess 3 b. The ink discharge passage 3 cpenetrates through the nozzle substrate 3 and has a discharge port 3 aat an opposite side from the pressure chamber 5. Therefore, when avolume change occurs in the pressure chamber 5, the ink retained in thepressure chamber 5 passes through the ink discharge passage 3 c and isdischarged from the discharge port 3 a.

The pressure chamber 5 is formed by digging into the silicon substrate 2and the vibrating film formation layer 10 from the rear surface side ofthe silicon substrate 2. Ink supply passages 4 (see FIG. 1 and FIG. 3together), in communication with the pressure chamber 5, are furtherformed in the silicon substrate 2 and the vibrating film formation layer10. The ink supply passages 4 are in communication with the pressurechamber 5 and are formed to guide ink from an ink tank (for example, anink cartridge) that is an ink supply source to the pressure chamber 5.

The pressure chamber 5 is formed to be elongate along an ink flowdirection 21, which is a right/left direction in FIG. 2. A portion ofthe vibrating film formation layer 10 that is a top roof portion of thepressure chamber 5 constitutes a vibrating film 10A. The vibrating film10A (vibrating film formation layer 10) is constituted, for example, ofa silicon oxide (SiO₂) film formed on the silicon substrate 2. Thevibrating film 10A (vibrating film formation layer 10) may beconstituted of a laminate, for example, of a silicon (Si) layer formedon the silicon substrate 2, a silicon oxide (SiO₂) layer formed on thesilicon layer, and a silicon nitride (SiN) layer formed on the siliconoxide layer. In the present specification, the vibrating film 10A refersto the portion of the vibrating film formation layer 10 that is the toproof portion defining the pressure chamber 5. Therefore, portions of thevibrating film formation layer 10 besides the top roof portion of thepressure chamber 5 do not constitute the vibrating film 10A.

The vibrating film 10A has a thickness of, for example, 0.4 μm to 2 μm.If the vibrating film 10A is constituted of a silicon oxide film, thethickness of the silicon oxide film may be approximately 1.2 μm. If thevibrating film 10A is constituted of a laminate of a silicon layer, asilicon oxide layer, and a silicon nitride layer, the thickness of eachof the silicon layer, the silicon oxide layer, and the silicon nitridelayer may be approximately 0.4 μm.

The pressure chamber 5 is defined by the vibrating film 10A, the siliconsubstrate 2, and the nozzle substrate 3 and is formed to a substantiallyrectangular parallelepiped shape in the present preferred embodiment.The pressure chamber 5 may, for example, have a length of approximately800 μm and a width of approximately 55 μm. The ink supply passages 4 areformed to be in communication with one end portion (an end portionpositioned at an opposite side from the discharge port 3 a in thepresent preferred embodiment) in a long direction of the pressurechambers. In the present preferred embodiment, the discharge port 3 a ofthe nozzle substrate 3 is disposed near another end portion related tothe long direction of the pressure chamber 5.

A piezoelectric element 6 is disposed on a front surface of thevibrating film 10A. The piezoelectric element 6 includes a lowerelectrode 7 formed on the vibrating film formation layer 10, apiezoelectric film 8 formed on the lower electrode 7, and an upperelectrode 9 formed on the piezoelectric film 8. In other words, thepiezoelectric element 6 is arranged by sandwiching the piezoelectricfilm 8 from above and below by the upper electrode 9 and the lowerelectrode 7.

The lower electrode 7 has, for example, a two-layer structure with a Ti(titanium) layer and a Pt (platinum) layer being laminated in that orderfrom the vibrating film 10A side. Besides this, the lower electrode 7may be formed of a single film that is an Au (gold) film, a Cr(chromium) layer, or an Ni (nickel) layer, etc. The lower electrode 7has a main electrode portion 7A in contact with a lower surface of thepiezoelectric film 8 and an extension portion 7B (see FIG. 1 and FIG. 4)extending to a region outside the piezoelectric film 8.

As the piezoelectric film 8, a PZT (PbZr_(x)Ti_(1-x)O₃: lead zirconatetitanate) film formed by a sol-gel method or a sputtering method may beapplied. Such a piezoelectric film 8 is constituted of a sintered bodyof a metal oxide crystal. The piezoelectric film 8 preferably has athickness of 1 μm to 5 μm. The overall thickness of the vibrating film10A is preferably approximately the same as the thickness of thepiezoelectric film 8 or approximately ⅔ the thickness of thepiezoelectric film.

The upper electrode 9 is formed to have substantially the same shape ina plan view as the piezoelectric film 8. The upper electrode 9 has, forexample, a three-layer structure in which an IrO₂ (iridium oxide) layerand an Ir (iridium) layer are laminated in that order from thepiezoelectric film 8 side and a Pt layer or an Au layer, etc., isfurther laminated thereon.

A front surface of the vibrating film formation layer 10, a frontsurface of the piezoelectric element 6, and a front surface of theextension portion of the lower electrode 7 are covered with a hydrogenbarrier film 13. The hydrogen barrier film 13 is constituted, forexample, of Al₂O₃ (alumina). Degradation of characteristics of thepiezoelectric film 8 due to hydrogen reduction can thereby be prevented.An insulating film 14 is laminated on the hydrogen barrier film 13. Theinsulating film 14 is constituted, for example, of SiO₂. A wiring 15 isformed on the insulating film 14. The wiring 15 is constituted of ametal material that includes Al (aluminum).

One end portion of the wiring 15 is disposed above one end portion ofthe upper electrode 9. A penetrating hole 16, penetrating continuouslythrough the hydrogen barrier film 13 and the insulating film 14, isformed between the wiring 15 and the upper electrode 9. The one endportion of the wiring 15 enters into the penetrating hole 16 and isconnected to the upper electrode 9 inside the penetrating hole 16. Also,the hydrogen barrier film 13 and the insulating film 14 have a cutoutportion 17 at a position corresponding to a region surrounded by aperipheral edge portion of a front surface of the upper electrode 9. Thecutout portion 17 is a portion at which the hydrogen barrier film 13 andthe insulating film 14 are cut out.

Also, at a position corresponding to a predetermined region on theextension portion of the lower electrode 7, an opening 18, penetratingcontinuously through the hydrogen barrier film 13 and the insulatingfilm 14, is formed and a front surface of the lower electrode 7 isexposed via the opening 18. The exposed portion constitutes a padportion 7 d arranged to connect the lower electrode 7 to the exterior.At a portion of the front surface of the vibrating film formation layer10 further upstream than an upstream side end in the ink flow direction21 of the piezoelectric element 6, the hydrogen barrier film 13 and theinsulating film 14 are formed only in a region close to the upstreamside end of the piezoelectric element 6 and the hydrogen barrier film 13and the insulating film 14 are not formed further upstream thereof asviewed from a direction orthogonal to the ink flow direction 12 (adirection along a front surface of the silicon substrate 2).

The piezoelectric element 6 is formed at a position facing the pressurechamber 5 across the vibrating film 10A. That is, the piezoelectricelement 6 is formed to contact a surface of the vibrating film 10A atthe opposite side from the pressure chamber 5. The pressure chamber 5 isfilled with ink supplied from an unillustrated ink tank through the inksupply passages 4. The vibrating film 10A defines a top surface portionof the pressure chamber 5 and faces the pressure chamber 5. Thevibrating film 10A is supported by portions of the laminate of thevibrating film formation layer 10 and the silicon substrate 2 at aperiphery of the pressure chamber 5 and has flexibility enablingdeformation in a direction facing the pressure chamber 5 (in otherwords, in the thickness direction of the vibrating film 10A).

The wiring 15 and the pad portion 7 d of the lower electrode 7 areconnected to a drive circuit 20. The drive circuit 20 may be formed in aregion of the silicon substrate 2 separate from the pressure chambers 5or may be formed outside the silicon substrate 2. When a drive voltageis applied from the drive circuit 20 to the piezoelectric element 6, thepiezoelectric film 8 deforms due to an inverse piezoelectric effect. Thevibrating film 10A is thereby made to deform together with thepiezoelectric element 6 to bring about a volume change of the pressurechamber 5 and the ink inside the pressure chamber 5 is pressurized. Thepressurized ink passes through the ink discharge passage 3 c and isdischarged as microdroplets from the discharge port 3 a.

Referring to FIG. 1 to FIG. 4, a plurality of the pressure chambers 5are formed as stripes extending parallel to each other in the laminateof the silicon substrate 2 and the vibrating film formation layer 10.The plurality of pressure chambers 5 are formed at equal intervals thatare minute intervals (for example, of approximately 30 μm to 350 μm) ina width direction thereof. In a plan view, each pressure chamber 5 hasan oblong shape that is elongate along the ink flow direction 21 fromthe ink supply passages 4 to the discharge passage 3 c. That is, the topsurface portion of the pressure chamber 5 has two side edges 5 c and 5 dalong the ink flow direction 21 and two end edges 5 a and 5 b along thedirection orthogonal to the ink flow direction 21. At the one endportion of each pressure chamber 5, the ink supply passages 4 aredivided and formed as two passages and are in communication with acommon ink passage 19. The common ink passage 19 is in communicationwith the ink supply passages 4 corresponding to the plurality ofpressure chambers 5 and is formed to supply the ink from the ink tank tothe ink supply passages 4.

The piezoelectric element 6 has a rectangular shape in a plan view withwhich a length in the ink flow direction 21 (same direction as a longdirection of the vibrating film 10A) is defined to be shorter than alength in the long direction of the vibrating film 10A. As shown in FIG.1, respective end edges 6 a and 6 b along a short direction of thepiezoelectric element 6 are disposed at inner sides at predeterminedintervals d1 (for example, of 5 μm) from respective corresponding endedges 10Aa and 10Ab of the vibrating film 10A. Also, with thepiezoelectric element 6, a width in the short direction (directionparallel to a major surface of the silicon substrate 2) orthogonal tothe long direction of the vibrating film 10A is defined to be narrowerthan a width in the short direction of the vibrating film 10A (topsurface portion of the pressure chamber 5). Respective side edges 6 cand 6 d along a long direction of the piezoelectric element 6 aredisposed at inner sides at predetermined intervals d2 (for example, of 5μm) from respective corresponding side edges 10Ac and 10Ad of thevibrating film 10A.

The lower electrode 7 has a flat plate shape, which, in a plan view hasa predetermined width in a direction along the ink flow direction 21 andextends across the plurality of pressure chambers 5 in the directionorthogonal to the ink flow direction 21, and is a common electrode usedin common for the plurality of piezoelectric elements 6. A first side 7a of the lower electrode 7 along the direction orthogonal to the inkflow direction 21 is matched in a plan view with a line joining the oneend edge 6 a of each of the plurality of piezoelectric elements 6. Asecond side 7 b of the lower electrode 7 facing the first side 7 a isdisposed further outside (downstream in the ink flow direction 21) thanthe other end edges 10Ab of the vibrating films 10A corresponding to theother end edges 6 b of the plurality of piezoelectric elements 6.

In the lower electrode 7, cutout portions 7 c of rectangular shapes in aplan view that penetrate through the lower electrode 7 are formed atdownstream sides in the ink flow direction 21 of the respectivepiezoelectric elements 6. In a plan view, each cutout portion 7 c hastwo side edges (short sides) along the ink flow direction 21 and two endedges (long sides) along the direction orthogonal to the ink flowdirection 21. One end edge of the cutout portion 7 c is disposed at aposition matching the end edge 6 b of the piezoelectric element 6 inrelation to the ink flow direction 21 and the other end edge is disposedfurther outside (downstream in the ink flow direction 21) than the endedge 10Ab of the vibrating film 10A. One side edge of the cutout portion7 c is disposed further outside than the one side edge 10Ac of thevibrating film 10A and the other side edge of the cutout portion 7 c isdisposed further outside than the other side edge 10Ad of the vibratingfilm 10A. Therefore in a plan view, an end portion of the vibrating film10A at the end edge 10Ab side is disposed at an inner side of the cutoutportion 7 c. The pad portion 7 d of rectangular shape that is elongatein the direction orthogonal to the ink flow direction 21 is formed in aregion between the second side 7 b of the lower electrode 7 and theplurality of cutout portions 7 c.

The lower electrode 7 includes the main electrode portions 7A thatconstitute the piezoelectric elements 6 and the extension portion 7Blead out from the main electrode portions 7A in a direction along thefront surface of the vibrating film formation layer 10 to cross overperipheral edges of the top surface portions (vibrating films 10A) ofthe pressure chambers 5 and extend outside the peripheral edges of thetop surface portions of the pressure chambers 5. Each main electrodeportion 7A is formed to be shorter than the vibrating film 10A in thelong direction of the vibrating film 10A and respective end edgesthereof are disposed at inner sides at the predetermined intervals d1from the respective corresponding end edges 10Aa and 10Ab of thevibrating film 10A. Also with the main electrode portion 7A, a widthalong the short direction of the vibrating film 10A is defined to benarrower than the width in the short direction of the vibrating film 10Aand respective side edges thereof are disposed at inner sides at theintervals d2 from the respective corresponding side edges 10Ac and 10Adof the vibrating film 10A.

In a plan view, the extension portion 7B extends from the respectiveside edges of each main electrode portion 7A to the outside of thecorresponding side edges 5 c and 5 d of the top surface portion of thepressure chamber 5 upon crossing over the side edges 5 c and 5 d of thetop surface portion of the pressure chamber 5. Of all regions of thelower electrode 7, the extension portion 7B is the region excluding themain electrode portions 7A. Referring to FIG. 5, each portion in theextension portion 7B that crosses over a peripheral edge (the side edge5 c or 5 d in the present preferred embodiment) of the pressure chamber5 may be referred to at times as a “crossover region 7C.” Also in thelower electrode 7, a region at the inner side of the peripheral edges 5a to 5 d of the top surface portion of the pressure chamber 5 in a planview may be referred to at times as an “inner electrode region” and aregion at the outer side of the peripheral edges 5 a to 5 d of the topsurface portion of the pressure chamber 5 may be referred to at times asan “outer electrode region.”

Each main electrode portion 7A in the lower electrode 7 is included inan inner electrode region. The extension portion 7B in the lowerelectrode 7 is constituted of the outer electrode region and regions ofthe inner electrode regions besides the main electrode portions 7A. Thecrossover regions 7C are regions in vicinities of boundary portionsbetween the inner electrode regions and the outer electrode region. Inthe present preferred embodiment, boundary lines between each innerelectrode region and the outer electrode region include two boundarylines corresponding to intermediate length portions of the respectiveside edges 5 c and 5 d of the top surface portion of the pressurechamber 5. Therefore, in the present preferred embodiment, the lowerelectrode 7 has two crossover regions 7C respectively crossing over theintermediate length portions of the respective side edges 5 c and 5 d ofthe top surface portion of the pressure chamber 5 in a plan view.

With the present preferred embodiment, a thickness of each crossoverregion 7C in the lower electrode 7 and a portion of each inner electroderegion excluding the crossover regions 7C is defined to be thinner thana thickness of a region besides the above. That is, with the presentpreferred embodiment, the lower electrode 7 has a thin portioncorresponding to each crossover region 7C, a thin portion correspondingto a region of each inner electrode region excluding the crossoverregions 7C, and a thick portion corresponding to a region besides theseregions. The thin portions of the lower electrode 7 are indicated as adotted region in FIG. 5. With the present preferred embodiment, a widthof a region in each crossover region 7C belonging to the inner electroderegion is set to be of the same width as a width of a region in theinner electrode region between the corresponding side edge of the innerelectrode region and the corresponding side edge of the main electrodeportion 7A. Therefore, with the present preferred embodiment, the lowerelectrode 7 has the thin portion corresponding to each crossover region7C, a thin portion corresponding to each main electrode portion 7A, anda thick portion corresponding to a region besides these regions. Thewidth of the region in each crossover region 7C belonging to the innerelectrode region may be set to be of shorter width than the width of theregion in the inner electrode region between the corresponding side edgeof the inner electrode region and the corresponding side edge of themain electrode portion 7A.

Referring to FIG. 1 to FIG. 4, the upper electrode 9 is formed to beshorter than the vibrating film 10A along the long direction of thevibrating film 10A and respective end edges thereof are disposed atinner sides at the predetermined intervals d1 from the respectivecorresponding end edges 10Aa and 10Ab of the vibrating film 10A. Alsowith the upper electrode 9, a width along the short direction of thevibrating film 10A is defined to be narrower than the width in the shortdirection of the vibrating film 10A and respective side edges thereofare disposed at inner sides at the intervals d2 from the respectivecorresponding side edges 10Ac and 10Ad of the vibrating film 10A.

The piezoelectric film 8 is formed in the same pattern as the upperelectrode 9. That is, the piezoelectric film 8 is formed to be shorterthan the vibrating film 10A along the long direction of the vibratingfilm 10A and respective end edges thereof are disposed at inner sides atthe predetermined intervals d1 from the respective corresponding endedges 10Aa and 10Ab of the vibrating film 10A. Also with thepiezoelectric film 8, a width along the short direction of the vibratingfilm 10A is deffined to be narrower than the width in the shortdirection of the vibrating film 10A and respective side edges thereofare disposed at inner sides at the intervals d2 from the respectivecorresponding side edges 10Ac and 10Ad of the vibrating film 10A. Alower surface of the piezoelectric film 8 contacts an upper surface ofthe portion of the lower electrode 7 that constitutes the piezoelectricelement 6 and an upper surface of the piezoelectric film 8 contacts alower surface of the upper electrode 9.

Each wiring 15 is constituted of a lead-out portion 15A, having one endportion connected to one end portion (an end portion at the one end edge6 a side of the piezoelectric element 6) of the upper electrode 9 andextending in a direction opposite to the ink flow direction 21 in a planview, and a pad portion 15B of rectangular shape in a plan view that ismade integral to the lead-out portion 15A and connected to a tip of thelead-out portion 15A. With the exception of a portion connected to theupper electrode 9, the lead-out portion 15A is formed on a front surfaceof the insulating film 14 that covers one end portion (an end portion atthe one end edge 6 a side of the piezoelectric element 6) of an uppersurface of the piezoelectric element 6, an end surface of thepiezoelectric element 6 continuous thereto, and the front surface of thevibrating film formation layer 10. The pad portion 15B is formed on aportion of the front surface of the vibrating film formation layer 10 atwhich the hydrogen barrier film 13 and the insulating film 14 are notformed.

An annular region (a rectangular annular region that is long in the inkflow direction 21 in the present preferred embodiment) in the vibratingfilm 10A between the peripheral edges 10Aa to 10Ad of the vibrating film10A and the peripheral edges 6 a to 6 d of the piezoelectric element 6is a region that is not constrained by the piezoelectric element 6 or aperipheral wall of the pressure chamber 5 and is a region in which alarge deformation occurs. That is, a peripheral edge portion of thevibrating film 10A is a region in which a large deformation occurs.Therefore, when the piezoelectric element 6 is driven, the peripheraledge portion of the vibrating film 10A bends so that an inner peripheraledge side of the peripheral edge portion of the vibrating film 10A isdisplaced in a thickness direction of the pressure chamber 5 (downwardin the present preferred embodiment) and an entirety of a centralportion surrounded by the peripheral edge portion of the vibrating film10A is thereby displaced in the thickness direction of the pressurechamber 5 (downward in the present preferred embodiment).

A portion of each crossover region 7C of the lower electrode 7 that islocated further inward than the top surface portion peripheral edges 5 ato 5 d (the side edges 5 c and 5 d of the top surface portion in thepresent preferred embodiment) of the pressure chamber 5 is formed on theperipheral edge portion of the vibrating film 10A. The crossover region7C of the lower electrode 7 may thus obstruct the deformation of thevibrating film 10A. With the present preferred embodiment, the lowerelectrode 7 has the thin portions corresponding to the crossover regions7C and therefore the deformation of the vibrating film 10A is made lesslikely to be obstructed in comparison to a case where the entire lowerelectrode 7 is thick in thickness. Also with the present preferredembodiment, the lower electrode 7 has, in addition to the thin portionscorresponding to the crossover regions 7C, the thin portioncorresponding to the region of each inner electrode region excluding thecrossover regions 7C (each main electrode portion 7A in the presentpreferred embodiment), and therefore the deformation of the vibratingfilm 10A is made even less likely to be obstructed.

Also with the present preferred embodiment, the lower electrode 7 hasthe thick portion corresponding to the region excluding the crossoverregions 7C and the region of each inner electrode region excluding thecrossover regions 7C (each main electrode portion 7A in the presentpreferred embodiment), and the lower electrode 7 can thus be decreasedin resistance value compared to a case where the entire lower electrode7 is thin in thickness. That is, with the present preferred embodiment,the lower electrode 7 can be made low in resistance value and thevibrating film 10A can be made large in displacement.

FIG. 6 is a process diagram of an example of a process for manufacturingthe inkjet printing head 1.

First the vibrating film formation layer 10 is formed on the frontsurface of the silicon substrate 2 (S1). Specifically, a silicon oxidelayer (for example, of 1.2 μm thickness) is formed on the front surfaceof the silicon substrate 2. If the vibrating film formation layer 10 isconstituted of a laminate of a silicon layer, a silicon oxide layer, anda silicon nitride layer, the silicon layer (for example, of 0.4 μmthickness) is formed on the front surface of the silicon substrate 2,the silicon oxide layer (for example, of 0.4 μm thickness) is formed onthe silicon layer, and the silicon nitride layer (for example, of 0.4 μmthickness) is formed on the silicon oxide layer. A base oxide film, forexample, of Al₂O₃, MgO, or ZrO₂, etc., may be formed on the frontsurface of the vibrating film formation layer 10. Such base oxide filmsprevent metal atoms from escaping from the piezoelectric film 8 that isto be formed later. When metal atoms escape, the piezoelectric film 8may degrade in piezoelectric characteristics. Also, when metal atomsthat have escaped become mixed in the silicon layer constituting thevibrating film 10A, the vibrating film 10A may degrade in durability.

Next, a lower electrode film, which is a material layer of the lowerelectrode 7, is formed above the vibrating film formation layer 10(above the base oxide film in the case where the base oxide film isformed) (S2). The lower electrode film is constituted, for example, of aPt/Ti laminated film having a Ti film (for example, of 100 Å to 400 Åthickness) as a lower layer and a Pt film (for example, of 100 Å to 4000Å thickness) as an upper layer. Such a lower electrode film may beformed by a sputtering method.

Next, thin portions of the lower electrode film are formed (S3). Thatis, a resist mask, covering a region besides regions that are to becomethe thin portions of the lower electrode 7 (the crossover regions 7C ofthe lower electrode 7 and the regions of the inner electrode regionsexcluding the crossover regions 7C), is formed by photolithography, andthe lower electrode film is etched using the resist mask as a mask toform the thin portions of the lower electrode 7. The thickness of thethin portions is, for example, approximately 1000 Å and the thickness ofthe portion (thick portion) besides the thin portions is, for example,approximately 2000 Å.

Next, a material film (piezoelectric material film) of the piezoelectricfilm 8 is formed on an entire surface of the lower electrode film (S4).Specifically, for example, a PZT film of 1 μm to 5 μm thickness isformed by a sol-gel method. Such a PZT film is constituted of a sinteredbody of metal oxide crystal grains.

Next, an upper electrode film, which is a material of the upperelectrode 9 is formed on the entire surface of the piezoelectricmaterial film (step S5). The upper electrode film is constituted, forexample, of an Ir/IrO₂ laminated film having an IrO₂ film (for example,of 400 Å to 1600 Å thickness) as a lower layer and an Ir film (forexample, of 500 Å to 2000 Å thickness) as an upper layer. Such an upperelectrode film may be formed by the sputtering method.

Next, patterning of the upper electrode film, the piezoelectric materialfilm, and the lower electrode film is performed (S6 to S12). First, aresist mask with a pattern of the lower electrode 7 is formed byphotolithography (S6) and the upper electrode film, the piezoelectricmaterial film, and the lower electrode film are etched in the samepattern using the resist mask as a mask to form a lower electrode filmof a predetermined pattern (steps S6 to S9). More specifically, theupper electrode film is patterned by dry etching (step S7), thepiezoelectric material film is patterned by wet etching (S8), and thelower electrode film is patterned by dry etching (step S9). The lowerelectrode 7 is thereby formed. The etchant used for wet etching of thepiezoelectric material film may be an acid having hydrochloric acid as amain component.

After then peeling off the resist mask, a resist mask with a pattern ofthe piezoelectric films 8 is formed by photolithography (S10) and theupper electrode film and the piezoelectric material film are etched inthe same pattern using the resist pattern (S11 to S12). Morespecifically, the upper electrode film is patterned by dry etching(S11), and the piezoelectric material film is patterned by wet etching(S12). The piezoelectric films 8 and the upper electrodes 9 are therebyformed.

Thereafter, the resist mask is peeled off and then the hydrogen barrierfilm 13 covering the entire surface is formed (S13). The hydrogenbarrier film 13 may be an Al₂O₃ film formed by the sputtering method andmay have a film thickness of 400 Å to 1600 Å.

Further, the insulating film 14 covering the hydrogen barrier film 13 isformed (S14). The insulating film 14 may be an SiO₂ film and may have afilm thickness of 2500 Å to 10000 Å.

Next, rear surface grinding for thinning the silicon substrate 2 isperformed (S15). For example, the silicon substrate 2 with a thicknessof approximately 670 μm in the initial state may be thinned to athickness of approximately 300 μm.

Thereafter, etching (dry etching or wet etching) from the rear surfaceof the silicon substrate 2 is performed on the laminate of the siliconsubstrate 2 and the vibrating film formation layer 10 to form thepressure chambers 5 and form the vibrating films 10A at the same time.In the etching process, the hydrogen barrier film 13 and the base oxidefilm formed on the front surface of the vibrating film formation layer10 prevents the escaping of metal elements (Pb, Zr, and Ti in the caseof PZT) from the piezoelectric film 8 and keeps the piezoelectriccharacteristics of the piezoelectric film 8 in a satisfactory state.Also as mentioned above, the base oxide film formed on the front surfaceof the vibrating film formation layer 10 contributes to maintaining thedurability of silicon layer that forms the vibrating film 10A.

Thereafter, patterning of the hydrogen barrier film 13 and theinsulating film 14, forming of the wirings 15, etc., are performed andthe inkjet printing head 1 shown in FIG. 1 to FIG. 4 is therebyobtained.

With the present preferred embodiment, the thickness of each crossoverregion 7C of the lower electrode 7 and the region of each innerelectrode region excluding the crossover regions 7C (each main electrodeportion 7A in the present preferred embodiment) is defined to be thinnerthan the other region. However, as shown in FIG. 7 and FIG. 8, thethickness of the region of each inner electrode region excluding thecrossover regions 7C (each main electrode portion 7A in the presentpreferred embodiment) may be defined to be thicker than the thickness ofthe crossover regions 7C. In other words, in the lower electrode 7, justthe crossover regions 7C may be formed to be thinner in thickness thanthe other regions. That is, the lower electrode 7 may have thin portionscorresponding to the crossover regions 7C and thick portionscorresponding to regions besides the crossover regions 7C. The thinportions of the lower electrode 7 in this case are indicated by dottedregions in FIG. 7.

Even with such an arrangement, the resistance value of the lowerelectrode 7 can be made small and the displacement of the vibrating film10A can be made large. Also with this arrangement, the thickness of eachmain electrode portion 7A is defined to be thicker than the thickness ofeach thin portion corresponding to each crossover region 7C andtherefore the resistance value of the lower electrode 7 can be decreasedfurther.

Even with the arrangement shown in FIG. 7 and FIG. 8, the width of theregion in each crossover region 7C belonging to the inner electroderegion may be set to be of shorter width than the width of the region inthe inner electrode region between the corresponding side edge of theinner electrode region and the corresponding side edge of the mainelectrode portion 7A. In such a case, the thickness of regions in eachinner electrode region between the main electrode portion 7A and thecrossover regions 7C may be defined to be as thin as the crossoverregions 7C or may be defined to be as thick as the main electrodeportion 7A.

With the preferred embodiment described above, the entirety of eachcrossover region 7C is formed thinly. However, the entirety of eachcrossover region 7C does not have to be formed thinly and just a portionof the crossover region 7C in the long direction (direction along theside edges 5 c and 5 d of the top surface portion of the pressurechamber 5) may be formed thinly. In other words, the thickness of just aportion of each crossover region 7C in the lower electrode 7 may bedefined to be thinner than the thickness of other regions. For example,as shown in FIG. 9, each crossover region 7C may have an arrangementwhere rectangular thin portions and thick portions having longdirections along the side edges 5 c and 5 d of the top surface portionof each pressure chamber 5 are formed alternately along the longdirection thereof. In FIG. 9, the rectangular thin portions in thecrossover regions 7C are indicated by dotted regions.

Further, the lower electrode 7 may have, in addition to or in place ofcrossover regions (hereinafter referred to as the “first crossoverregions 7C”) crossing over the side edges 5 c and 5 d of the top surfaceportion of each pressure chamber 7, crossover regions ((hereinafterreferred to as the “second crossover regions 7C”) crossing over the endedges 5 a and 5 b of the top surface portion of each pressure chamber 7in a plan view. When the lower electrode 7 has the second crossoverregions in addition to the first crossover regions, at least a portionof each of the first crossover regions and the second crossover regionsin a direction along the peripheral edges 5 a to 5 d of the top surfaceportion of the pressure chamber 5 is formed to be thin in thickness.When the lower electrode 7 has the second crossover regions in place ofthe first crossover regions, at least a portion of each of the secondcrossover regions in a direction along the end edges 5 a and 5 b of thetop surface portion of the pressure chamber 5 is formed to be thin inthickness. Even in these cases, the thickness of a region in a portion(inner electrode region) of the lower electrode 7 disposed at the innerside of the top surface portion peripheral edges 5 a to 5 d of eachpressure chamber 5 in a plan view and excluding the crossover regions 7Cmay be formed to be thin in thickness.

An arrangement example of the piezoelectric film 8 used in the inkjetprinting head 1 shall now be described.

FIG. 10 is a schematic sectional view of the piezoelectric film 8. Thepiezoelectric film 8 is formed to be in contact with the front surfaceof the lower electrode (metal film) 7 formed on the silicon substrate 2.More specifically, the vibrating film formation layer 10 is formed onthe front surface of the silicon substrate 2, the lower electrode 7 isformed on the front surface of the vibrating film formation layer 10,and the piezoelectric film 8 is formed on the front surface of the lowerelectrode 7. In the present preferred embodiment, the lower electrode 7is constituted of the Pt/Ti laminated film having the Ti film as thelower layer and the Pt film as the upper layer. The upper electrode 9 isformed on the upper surface of the piezoelectric film 8. The upperelectrode 9 is constituted of the Ir/IrO₂ laminated film having the IrO₂film as the lower layer and the Ir film as the upper layer.

The piezoelectric film 8 includes an adhesion layer 101 formed on thefront surface of the lower electrode 7, a first seed layer 102 formed onthe adhesion layer 101, a plurality of main baking unit PZT layers 103to 106 laminated on the first seed layer 102, a second seed layer 107formed on the front surface of the main baking unit PZT 106, and aplurality of main baking unit PZT layers 108 to 112 formed on the frontsurface of the second seed layer 107.

“Main baking unit PZT layer” refers to a PZT layer formed by performing,once or a plurality of times, a gelled film forming process, constitutedof a coating process of coating on a precursor solution, containing PZT,a drying process of drying the coating film, and a prebaking process ofheating the coating film after the drying process to make the coatingfilm undergo gelling, and thereafter performing a main baking process ofheat-treating and thereby sintering the gelled coating film. That is,the main baking unit PZT layers are formed by the sol-gel method.

The precursor solution contains a solvent in addition to PZT. In thecoating process, the precursor solution is, for example, spin-coated.The drying process is performed under a temperature environment, forexample, of 140° C. The drying process may be a natural drying process.In the prebaking process, heat treatment, for example, at a temperature(for example, of 400° C.) not less than the melting point (327.5° C.) oflead is performed on the coating film after the drying process. Heattreatment at a temperature (for example, of 300° C.) less than themelting point of lead may be performed in the prebaking process. In themain baking process, heat treatment, for example, at a temperature of700° C. is performed on the gelled coating film. The main baking processmay be performed by RTA (rapid thermal annealing).

In the description that follows, PZT layers respectively correspondingto one or a plurality of coating film layers that are sintered at thesame time in the main baking process may be referred to at times as the“prebaking unit PZT layers.”

The adhesion layer 101 is a layer provided to improve adhesion of thepiezoelectric film 8 and the lower electrode 7 and is constituted of aTiO layer in the present preferred embodiment. The TiO layer may beformed, for example, by the sol-gel method, the sputtering method, etc.

Each of the seed layers 102 and 107 is a layer provided to improvecrystallinity and adhesion of PZT and is arranged, for example, from aPZT seed layer constituted of PZT or a TiO seed layer constituted ofTiO. The first seed layer 102 and the second seed layer 107 may bearranged from the same material or may be arranged from mutuallydifferent materials. To form a PZT seed layer, the gelled film formingprocess, constituted of the coating process of coating on the precursorsolution, containing PZT, the drying process of drying the coating film,and the prebaking process of heating the coating film after the dryingprocess to make the coating film undergo gelling, is performed once andthereafter the main baking process of heat-treating and therebysintering the gelled coating film is performed. A TiO seed layer may beformed, for example, by the sol-gel method, the sputtering method, etc.

With the arrangement example of FIG. 10, four main baking unit PZTlayers 103 to 106 are laminated between the first seed layer 102 and thesecond seed layer 107, and five main baking unit PZT layers 108 to 112are laminated on the second seed layer 107.

Among the main baking unit PZT layers 103 to 106 and 108 to 112, each ofthe main baking unit PZT layers 103 to 106 and 108 to 111 besides theuppermost main baking unit PZT layer 112 is formed by performing thegelled film forming process, constituted of the coating process ofcoating on the precursor solution, containing PZT, the drying process ofdrying the coating film, and the prebaking process of heating thecoating film after the drying process to make the coating film undergogelling, a plurality of times, three times in the present preferredembodiment, and thereafter performing the main baking process ofheat-treating and thereby sintering the gelled coating film. Therefore,each of the main baking unit PZT layers 103 to 106 and 108 to 111besides the uppermost main baking unit PZT layer 112 includes threeprebaking unit PZT layers 100. A single prebaking unit PZT layer 100 hasa thickness of 0.08 μm in the present preferred embodiment.

On the other hand, uppermost main baking unit PZT layer 112 is formed byperforming the gelled film forming process, constituted of the coatingprocess of coating on the precursor solution, containing PZT, the dryingprocess of drying the coating film, and the prebaking process of heatingthe coating film after the drying process to make the coating filmundergo gelling, once and thereafter performing the main baking processof heat-treating and thereby sintering the gelled coating film.Therefore, the uppermost main baking unit PZT layer includes oneprebaking unit PZT layer 100.

The greater the number of coating film layers that are sintered at thesame time in the main baking process, that is, the greater the number ofprebaking unit PZT layers included in a main baking unit PZT layer, theless the number of times the main baking process is performed as a wholeand therefore the higher the manufacturing efficiency. However, thegreater the number of coating film layers that are sintered at the sametime in the main baking process, the thicker the overall thickness ofthe coating films that are sintered by the main baking process andtherefore the greater the unevenness of the front surface (uppersurface) of the main baking unit PZT layer that is formed after the mainbaking process.

With the arrangement example of FIG. 10, whereas three prebaking unitPZT layers are included in each of the main baking unit PZT layers 103to 106 and 108 to 111 besides the uppermost main baking unit PZT layer112, one prebaking unit PZT layer is included in the uppermost mainbaking unit PZT layer 112. The unevenness of the front surface of theuppermost main baking unit PZT layer 112 is thus small in comparison tothe unevenness of the front surface of each of the other main bakingunit PZT layers 103 to 106, 108 to 111. Consequently, the unevenness ofthe front surface of the uppermost main baking unit PZT layer 112 issmaller than the unevenness of an interface between the main baking unitPZT layer 112 and the adjacent main baking unit PZT layer 111 that issecond from the top. The piezoelectric film 8 with a smooth uppermostsurface is thereby obtained. Adhesion of the piezoelectric film 8 andthe upper electrode 9 can thereby be improved. Also, parallelism betweenthe lower electrode 7 and the upper electrode 9 can be improved and thepiezoelectric film can thus be improved in piezoelectric performance.

Also with the arrangement example of FIG. 10, the piezoelectric film 8includes, in addition to the first seed layer 102 present at the lowersurface side of the lowermost main baking unit PZT layer 103, the secondseed layer 107 interposed between the mutually adjacent main baking unitPZT layers 106 and 108 at an intermediate position between the lowermostmain baking unit PZT layer 103 and the uppermost main baking unit PZTlayer 112. Therefore in comparison to a case where a seed layer isprovided just at the lower surface side of the lowermost main bakingunit PZT layer 103, directions of crystals of the respective main bakingunit PZT layers 103 to 106 and 108 to 112 are aligned more readily. Thepiezoelectric film 8 having stable piezoelectric characteristics isthereby obtained.

Such a piezoelectric film 8 is formed as follows. First, the adhesionlayer 101 is formed on the lower electrode 7 and the first seed layer102 is formed on the adhesion layer 101. Thereafter, the lowermost mainbaking unit PZT layer 103 is formed on the first seed layer 102 and thesecond to fourth main baking unit PZT layers 104 to 106 are formedsuccessively thereon. Thereafter, the second seed layer 107 is formed onthe fourth main baking unit PZT layer 106. Thereafter, the fifth mainbaking unit PZT layer 108 is formed on the second seed layer 107 and thesixth to eighth main baking unit PZT layers 109 to 111 are formedsuccessively thereon. Lastly, the uppermost (ninth) main baking unit PZTlayer 112 is formed on the eighth main baking unit PZT layer 111.

Examples of the piezoelectric film 8 shall now be described.

First Example

In a first example, the first seed layer 102 and the second seed layer107 are arranged from PZT seed layers constituted of PZT. In the firstexample, the first seed layer 102 and the second seed layer 107 arearranged from the same material and therefore the manufacturingefficiency can be improved.

Second Example

In a second example, the first seed layer 102 and the second seed layer107 are arranged from TiO seed layers constituted of TiO. In the secondexample, the first seed layer 102 and the second seed layer 107 arearranged from the same material and therefore the manufacturingefficiency can be improved.

Third Example

In a third example, the first seed layer 102 is arranged from a TiO seedlayer constituted of TiO and the second seed layer 107 is arranged froma PZT seed layer constituted of PZT.

Fourth Example

In a fourth example, the first seed layer 102 is arranged from a PZTseed layer constituted of PZT and the second seed layer 107 is arrangedfrom a TiO seed layer constituted of TiO.

With the arrangement example of FIG. 10, three prebaking unit PZT layersare included in each of the main baking unit PZT layers 103 to 106 and108 to 111 besides the uppermost main baking unit PZT layer 112.However, it suffices that not less than two prebaking unit PZT layersare included in the second main baking unit PZT layer 111 from the topthat is adjacent to the uppermost main baking unit PZT layer 112 and thenumber of prebaking unit PZT layers included in each of the lower mainbaking unit PZT layers 103 to 106 and 108 to 110 may be one or a pluralnumber other than three.

Also, the number of main baking unit PZT layers included in thepiezoelectric film 8 is not restricted to the number of layers in thearrangement example of FIG. 10 and may be set to any number as long asit is not less than two. Also, the thickness of the prebaking unit PZTlayer is not restricted to the thickness in the arrangement example ofFIG. 10 and may be set to any thickness.

Also, although with the arrangement example of FIG. 10, the second seedlayer 107 is provided only at a single predetermined intermediateposition between the lowermost main baking unit PZT layer 103 and theuppermost main baking unit PZT layer 112, second seed layers may beprovided at a plurality of different intermediate positions.

Also, although with the preferred embodiments described above, caseswhere the present invention is applied to an inkjet printing head wasdescribed, the present invention may also be applied to a microphone,pressure sensor, acceleration sensor, angular velocity sensor,ultrasonic sensor, speaker, or IR sensor (heat sensor), etc., that usesa piezoelectric element.

Besides the above, various design changes may be applied within thescope of the matters described in the claims.

The following further features can be extracted from the presentspecification.

A1. A piezoelectric film including a plurality of laminated main bakingunit PZT layers, a first seed layer present at a lower surface side of alowermost main baking unit PZT layer, and a second seed layer interposedbetween two adjacent main baking unit PZT layers at an intermediateposition between the lowermost main baking unit PZT layer and anuppermost main baking unit PZT layer.

“Main baking unit PZT layer” refers to a PZT layer formed by performing,once or a plurality of times, a gelled film forming process, constitutedof a coating process of coating on a precursor solution, containing PZT,a drying process of drying the coating film, and a prebaking process ofheating the coating film after the drying process to make the coatingfilm undergo gelling, and thereafter performing a main baking process ofheat-treating and thereby sintering the gelled coating film.

With the present arrangement, the seed layer is present not only at thelower surface side of the lowermost main baking unit PZT layer but alsoat the intermediate position between the lowermost main baking unit PZTlayer and the uppermost main baking unit PZT layer. Therefore incomparison to a piezoelectric film in which a seed layer is providedjust at the lower surface side of the lowermost main baking unit PZTlayer, directions of crystals of the respective main baking unit PZTlayers are aligned more readily. The piezoelectric film having stablepiezoelectric characteristics is thereby obtained.

A2. The piezoelectric film according to “A1.,” where the first seedlayer and the second seed layer are arranged from the same material.With this arrangement, the manufacturing efficiency of the piezoelectricfilm can be improved.

A3. The piezoelectric film according to “A2.,” where the first seedlayer and the second seed layer are arranged from PZT seed layersconstituted of PZT.

A4. The piezoelectric film according to “A2.,” where the first seedlayer and the second seed layer are arranged from TiO seed layersconstituted of titanium oxide.

A5. The piezoelectric film according to “A1.,” where the first seedlayer and the second seed layer are arranged from different materials.

A6. The piezoelectric film according to “A5.,” where the first seedlayer is arranged from a TiO seed layer constituted of titanium oxideand the second seed layer is arranged from a PZT seed layer constitutedof PZT.

A7. The piezoelectric film according to “A5.,” where the first seedlayer is arranged from a PZT seed layer constituted of PZT and thesecond seed layer is arranged from a TiO seed layer constituted oftitanium oxide.

A8. The piezoelectric film according to any one of “A3.,” “A6.,” or“A7.,” where the PZT seed layer is formed by performing a gelled filmforming process, constituted of a coating process of coating on aprecursor solution, containing PZT, a drying process of drying thecoating film, and a prebaking process of heating the coating film afterthe drying process to make the coating film undergo gelling, once andthereafter performing a main baking process of heat-treating and therebysintering the gelled coating film.

A9. A piezoelectric element including a lower electrode, thepiezoelectric film according to any one of “A1.” to “A8.” that is formedon the lower electrode, and an upper electrode formed on thepiezoelectric film. With this arrangement, the piezoelectric elementhaving stable piezoelectric characteristics is obtained.

A10. An inkjet printing head including a cavity, a vibrating filmdisposed on the cavity and defining a top surface portion of the cavity,and the piezoelectric element according to “A9.” that is formed on thevibrating film. With this arrangement, the inkjet printing head that canrealize stable driving characteristics can be provided by the use of thepiezoelectric element having stable piezoelectric characteristics.

Also, the following further features can be extracted from the presentspecification.

B1. A piezoelectric film including a plurality of laminated main bakingunit PZT layers and where an unevenness of a front surface of anuppermost main baking unit PZT layer is smaller than an unevenness of aninterface between the uppermost main baking unit PZT layer and a mainbaking unit PZT layer that is adjacent thereto and is second from thetop.

“Main baking unit PZT layer” refers to a PZT layer formed by performing,once or a plurality of times, a gelled film forming process, constitutedof a coating process of coating on a precursor solution, containing PZT,a drying process of drying the coating film, and a prebaking process ofheating the coating film after the drying process to make the coatingfilm undergo gelling, and thereafter performing a main baking process ofheat-treating and thereby sintering the gelled coating film. By thepresent arrangement, the piezoelectric film with a smooth uppermostsurface can be obtained.

B2. The piezoelectric film according to “B1.,” where a thickness of theuppermost main baking unit PZT layer is thinner than a thickness of themain baking unit PZT layer that is second from the top. By the presentarrangement, the piezoelectric film with a smooth uppermost surface canbe obtained.

B3. The piezoelectric film according to “B1.” or “B2.,” where theuppermost main baking unit PZT layer is formed by performing a gelledfilm forming process, constituted of a coating process of coating on aprecursor solution, containing PZT, a drying process of drying thecoating film, and a prebaking process of heating the coating film afterthe drying process to make the coating film undergo gelling, once andthereafter performing a main baking process of heat-treating and therebysintering the gelled coating film.

With a main baking unit PZT layer, which is formed by performing thegelled film forming process, constituted of the coating process, thedrying process, and the prebaking process, once and thereafterperforming the main baking process, the front surface is small inunevenness in comparison to a main baking unit PZT layer formed byperforming the gelled film forming process, constituted of the coatingprocess, the drying process, and the prebaking process, a plurality oftimes and thereafter performing the main baking process. Therefore withthe present arrangement, the unevenness of the front surface of theuppermost main baking unit PZT layer is small. The piezoelectric filmwith a smooth uppermost surface is thereby obtained.

B4. The piezoelectric film according to “B3.,” where the main bakingunit PZT layer that is second from the top is formed by performing thegelled film forming process, constituted of the coating process, thedrying process, and the prebaking process, a plurality of times andthereafter performing the main baking process.

B5. The piezoelectric film according to “B3.,” where each main bakingunit PZT layer other than the uppermost main baking unit PZT layer isformed by performing the gelled film forming process, constituted of thecoating process, the drying process, and the prebaking process, aplurality of times and thereafter performing the main baking process.

B6. The piezoelectric film according to any one of “B1.” to “B5.,”including a first seed layer present at a lower surface side of alowermost main baking unit PZT layer. With this arrangement, directionsof crystals of the respective main baking unit PZT layers are alignedreadily. The piezoelectric film having stable piezoelectriccharacteristics is thereby obtained.

B7. The piezoelectric film according to “B6.,” including a second seedlayer interposed between two adjacent main baking unit PZT layers at anintermediate position between the lowermost main baking unit PZT layerand the uppermost main baking unit PZT layer. With this arrangement, thedirections of the crystals of the respective main baking unit PZT layersare aligned more readily. The piezoelectric film having more stablepiezoelectric characteristics is thereby obtained.

B8. The piezoelectric film according to “B7.,” where the first seedlayer and the second seed layer are arranged from the same material.With this arrangement, the manufacturing efficiency of the piezoelectricfilm can be improved.

B9. The piezoelectric film according to “B8.,” where the first seedlayer and the second seed layer are arranged from PZT seed layersconstituted of PZT.

B10. The piezoelectric film according to “B8.,” where the first seedlayer and the second seed layer are arranged from TiO seed layersconstituted of titanium oxide.

B11. The piezoelectric film according to “B7.,” where the first seedlayer and the second seed layer are arranged from different materials.

B12. The piezoelectric film according to “B11.,” where the first seedlayer is arranged from a TiO seed layer constituted of titanium oxideand the second seed layer is arranged from a PZT seed layer constitutedof PZT.

B13. The piezoelectric film according to “B11.,” where the first seedlayer is arranged from a PZT seed layer constituted of PZT and thesecond seed layer is arranged from a TiO seed layer constituted oftitanium oxide.

B14. The piezoelectric film according to any one of “B9.,” “B12.,” or“B13.,” where the PZT seed layer is formed by performing a gelled filmforming process, constituted of a coating process of coating on aprecursor solution, containing PZT, a drying process of drying thecoating film, and a prebaking process of heating the coating film afterthe drying process to make the coating film undergo gelling, once andthereafter performing a main baking process of heat-treating and therebysintering the gelled coating film.

B15. A piezoelectric element including a lower electrode, thepiezoelectric film according to any one of “B1.” to “B14.” that isformed on the lower electrode, and an upper electrode formed on thepiezoelectric film. With this arrangement, adhesion between thepiezoelectric film and the upper electrode can be improved because theuppermost surface of the piezoelectric element is smooth. Also,parallelism between the lower electrode and the upper electrode can beimproved and therefore the piezoelectric film can be improved inpiezoelectric performance. The piezoelectric element having excellentpiezoelectric characteristics can thereby be provided.

B16. An inkjet printing head including a cavity, a vibrating filmdisposed on the cavity and defining a top surface portion of the cavity,and the piezoelectric element according to “B15.” that is formed on thevibrating film. With this arrangement, the inkjet printing head that canrealize stable discharge can be provided by the use of the piezoelectricelement having stable piezoelectric characteristics.

While preferred embodiments of the present invention have been describedabove, it is to be understood that variations and modifications will beapparent to those skilled in the art without departing the scope andsprit of the present invention. The scope of the present invention,therefore, is to be determined solely by the following claims.

The present application corresponds to Japanese Patent Application No.2014-055160 filed on Mar. 18, 2014, Japanese Patent Application No.2014-055159 filed on Mar. 18, 2014, and Japanese Patent Application No.2014-055158 filed on Mar. 18, 2014 in the Japan Patent Office andJapanese Patent Application No. 2015-011715 filed on Jan. 23, 2015 inthe Japan Patent Office, and the entire disclosures of theseapplications are incorporated herein by reference.

What is claimed is:
 1. A device using a piezoelectric film comprising: acavity; a vibrating film formation layer including a vibrating filmdisposed above the cavity and defining a top surface portion of thecavity; and a piezoelectric element formed to contact a surface of thevibrating film at an opposite side from the cavity and having aperipheral edge receded further toward an interior of the cavity thanthe vibrating film in a plan view of viewing from a direction normal toa major surface of the vibrating film; and wherein the piezoelectricelement includes a lower electrode formed on a surface of the vibratingfilm formation layer at the opposite side from the cavity, an upperelectrode disposed at an opposite side from the vibrating film formationlayer with respect to the lower electrode, and a piezoelectric filmprovided between the upper electrode and the lower electrode; the lowerelectrode includes a main electrode portion constituting thepiezoelectric element and an extension portion lead out from the mainelectrode portion in a direction along the surface of the vibrating filmformation layer to crossover atop surface portion peripheral edge of thecavity and extend outside the cavity in the plan view, and, in the planview, the main electrode portion is included in an inner electroderegion of the lower electrode located further inward than the topsurface portion peripheral edge of the cavity, the extension portionincludes an outer electrode region of the lower electrode connected tothe inner electrode region and located further outward than the topsurface portion peripheral edge of the cavity, and the lower electrodehas a thin portion formed thinly to cross over a boundary line betweenthe inner electrode region and the outer electrode region.
 2. The deviceusing the piezoelectric film according to claim 1, wherein the thinportion is formed across an entirety of the boundary line between theinner electrode region and the outer electrode region of the lowerelectrode.
 3. The device using the piezoelectric film according to claim2, wherein the main electrode portion is also formed at a thin portionof thin thickness.
 4. The device using the piezoelectric film accordingto claim 2, wherein the thickness of a region of the lower electrodeincluding the main electrode portion is thicker than the thickness ofthe thin portion.
 5. The device using the piezoelectric film accordingto claim 4, wherein the thickness of the entirety of the main electrodeportion is thicker than the thickness of the thin portion and thethickness of a region of the inner electrode region besides the mainelectrode portion is thin.
 6. The device using the piezoelectric filmaccording to claim 1, wherein the thin portion is formed at a portion ofthe boundary line between the inner electrode region and the outerelectrode region of the lower electrode.
 7. The device using thepiezoelectric film according to claim 6, wherein the thin portionincludes a plurality of thin portions formed at intervals along theboundary line between the inner electrode region and the outer electroderegion of the lower electrode.
 8. The device using the piezoelectricfilm according to claim 7, wherein the plurality of the thin portionshave rectangular shapes that are long in a direction along the boundaryline between the inner electrode region and the outer electrode regionof the lower electrode.
 9. The device using the piezoelectric filmaccording to claim 6, wherein the thickness of the region of the lowerelectrode including the main electrode portion is thicker than thethickness of the thin portion.
 10. The device using the piezoelectricfilm according to claim 9, wherein the thickness of the entirety of themain electrode portion is thicker than the thickness of the thin portionand the thickness of the region of the inner electrode region besidesthe main electrode portion is thin.
 11. The device using thepiezoelectric film according to claim 1, wherein, in the plan view, thetop surface portion of the cavity has a rectangular shape that is longin one direction, the main electrode portion has, in the plan view, arectangular shape being long in the one direction and having a widthshorter than a width in a short direction of the top surface portion ofthe cavity and a length shorter than a length in a long direction of thetop surface portion of the cavity, with both end edges and both sideedges thereof receded further toward the interior of the cavity thanboth end edges and both side edges of the top surface portion of thecavity, the extension portion extends from respective side edges of themain electrode portions to the outside of corresponding side edges ofthe top surface portion of the cavity upon crossing over intermediateportions of the top surface portion side edges, and the boundary linebetween the inner electrode region and the outer electrode regionincludes two boundary lines corresponding to the intermediate portionsof the respective side edges of the top surface portion of the cavity.12. The device using the piezoelectric film according to claim 11,wherein a plurality of the cavities are provided and the plurality ofthe cavities are disposed to be aligned in the short direction of eachcavity.
 13. The device using the piezoelectric film according to claim12, wherein mutually facing side edges of two of the main electrodeportions respectively disposed above two of the cavities that aremutually adjacent are connected to each other by the extension portionlead out therefrom and the thickness of substantially the entirety of aregion of the extension portion between the two mutually adjacentcavities is thicker than the thickness of the thin portion.
 14. Thedevice using the piezoelectric film according to claim 13, wherein theextension portion lead out from a plurality of the main electrodeportions disposed above a plurality of the cavities is, in the planview, connected at a position further outside the respective cavitiesthan one end in the long direction of the respective cavities.
 15. Thedevice using the piezoelectric film according to claim 14, wherein aplurality of cutout portions are formed in regions of the lowerelectrode, which, in the plan view, respectively include end portions ofthe respective cavities at the one end side in the long direction. 16.The device using the piezoelectric film according to claim 7, whereinthe thickness of a region of the lower electrode including the mainelectrode portion is thicker than the thickness of the thin portion. 17.The device using the piezoelectric film according to claim 8, whereinthe thickness of a region of the lower electrode including the mainelectrode portion is thicker than the thickness of the thin portion. 18.The device using the piezoelectric film according to claim 2, wherein,in the plan view, the top surface portion of the cavity has arectangular shape that is long in one direction, the main electrodeportion has, in the plan view, a rectangular shape being long in the onedirection and having a width shorter than a width in a short directionof the top surface portion of the cavity and a length shorter than alength in a long direction of the top surface portion of the cavity,with both end edges and both side edges thereof receded further towardthe interior of the cavity than both end edges and both side edges ofthe top surface portion of the cavity, the extension portion extendsfrom respective side edges of the main electrode portions to the outsideof corresponding side edges of the top surface portion of the cavityupon crossing over intermediate portions of the top surface portion sideedges, and the boundary line between the inner electrode region and theouter electrode region includes two boundary lines corresponding to theintermediate portions of the respective side edges of the top surfaceportion of the cavity.
 19. The device using the piezoelectric filmaccording to claim 3, wherein, in the plan view, the top surface portionof the cavity has a rectangular shape that is long in one direction, themain electrode portion has, in a plan view, a rectangular shape beinglong in the one direction and having a width shorter than a width in ashort direction of the top surface portion of the cavity and a lengthshorter than a length in a long direction of the top surface portion ofthe cavity, with both end edges and both side edges thereof recededfurther toward the interior of the cavity than both end edges and bothside edges of the top surface portion of the cavity, the extensionportion extends from respective side edges of the main electrodeportions to the outside of corresponding side edges of the top surfaceportion of the cavity upon crossing over intermediate portions of thetop surface portion side edges, and the boundary line between the innerelectrode region and the outer electrode region includes two boundarylines corresponding to the intermediate portions of the respective sideedges of the top surface portion of the cavity.
 20. The device using thepiezoelectric film according to claim 4, wherein, in the plan view, thetop surface portion of the cavity has a rectangular shape that is longin one direction, the main electrode portion has, in the plan view, arectangular shape being long in the one direction and having a widthshorter than a width in a short direction of the top surface portion ofthe cavity and a length shorter than a length in a long direction of thetop surface portion of the cavity, with both end edges and both sideedges thereof receded further toward the interior of the cavity thanboth end edges and both side edges of the top surface portion of thecavity, the extension portion extends from respective side edges of themain electrode portions to the outside of corresponding side edges ofthe top surface portion of the cavity upon crossing over intermediateportions of the top surface portion side edges, and the boundary linebetween the inner electrode region and the outer electrode regionincludes two boundary lines corresponding to the intermediate portionsof the respective side edges of the top surface portion of the cavity.